WIDE BANDGAP SEMICONDUCTORS FOR HIGH-POWER ELECTRONICS

Abstract

Wide bandgap (WBG) semiconductors—primarily silicon carbide (SiC) and gallium nitride (GaN)—represent a transformative advance in high-power electronics, offering higher breakdown voltages, elevated thermal conductivity, faster switching speeds, and superior high-temperature operation compared to conventional silicon devices. These intrinsic material advantages enable novel applications in electric vehicles, renewable energy conversion, power grids, and aerospace systems, where efficiency, reliability, and power density are critical performance metrics. This article presents a comprehensive review of WBG semiconductor materials, device technologies, and their integration into high-power electronic systems. A structured methodology synthesizes literature on material properties, device architectures, thermal challenges, and system-level performance. Results demonstrate that WBG power devices significantly reduce conduction and switching losses, improve overall converter efficiency, and enable higher operating frequencies. Nevertheless, challenges remain in thermal management, manufacturing scalability, and reliability under extreme conditions. The discussion contextualizes the findings within current research, highlighting emerging ultra-wide bandgap (UWBG) candidates and future research directions including advanced materials synthesis, co-design strategies, and system optimization.